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Paper Titles
Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
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New Approach to Capacitance Studies of 'DX' Centers
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Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
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Modeling of Dopant and Defect Interactions in Si Process Simulators
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Spectroscopic Study of Magnesium-Related Impurities in Silicon
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Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
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Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
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A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism
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In-Diffusion Concentration Profiles of Dopants in Semiconductors
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Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

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Periodical:

Defect and Diffusion Forum (Volumes 221-223)

Pages:

23-30

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.221-223.23

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Online since:

November 2003

Authors:

Takao Wada, Hiroshi Fujimoto

Keywords:

Electron Beam Doping, Non-Equilibrium Process

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] For example, J. W. Corbett: Solid State Physics (Academic Press, New York, 1966), Supple. 7.

Google Scholar

[2] C. P. Flynn: Point Defect and Diffusion (Clarendon Press, Oxford, 1972).

Google Scholar

[3] T. Wada: Proc. 3 rd Int. Conf. Neutron Transmutation Doped Silicon (Copenhagen, 1981), ed. Jens Guldberg (Plenum, New York, 1981), p.447.

Google Scholar

[4] T. Wada and E. Matumoto: Inst. Phys. Conf. Ser. No. 59. (Bristol & London, 1981), p.347.

Google Scholar

[5] T. Wada and M. Takeda; Proc. 4 th Int. Con. Ion and Plasma Assisted Techniques (Kyoto, 1983), ed. T. Takagi (Institute of Electrical Engineering of Japan. Tokyo, 1983).

Google Scholar

[6] T. Wada and H. Hada: Phys. Rev. B30 (1984), p.3384.

Google Scholar

[7] T. Wada, M. Takeda and K. Yasuda: J. Electron Mater: 14 (1985), p.171.

Google Scholar

[8] T. Wada. And Y. Maeda: Appl. Phys. Lett. 51 (1987), p.2130.

Google Scholar

[9] T. Wada: Appl. Phys. Lett. 52 (1988), p.1056.

Google Scholar

[10] T. Wada and A. Takeda: Nucl. Instrum. Methods, Phys. Res. Sec. B 37/38 (1989), p.352.

Google Scholar

[11] T. Wada, Y. Maeda and S. Kojima: Radiat. Eff. Defect Solids, 111&112 (1989), p.471.

Google Scholar

[12] T. Wada and Y. Maeda: Appl. Phys. Lett. 52 (1988), p.60.

Google Scholar

[13] T. Wada, R. Abe, A. Tekeda, M. Ichimura and M. Takeda: Solid State Electron. 33 (1990), p.155.

Google Scholar

[14] T. Wada, H. Fujimoto and H. Masuda: Mater. Sci. Forum 196-201 (1995), p.1607.

Google Scholar

[15] T. Wada, H. Fujimoto and H. Masuda: Mater: Sci. Forum 196-201 (1995), p.1625. � � � � � � � � � � � � � � � � � � � � � �.

Google Scholar

[16] K. Yasuda and T. Wada: Jpn. J. Appl. Phys. 33 (1994), p.3622.

Google Scholar

[17] T. Wada: Defect and Diffusion Forum: 117-118 (1995), p.13.

Google Scholar

[18] T. Wada and K. Yasuda: Phys. Rev. B. 53 (1996), p.4770.

Google Scholar

[19] T. Wada, H. Fujimoto, D. Toyota, H. Masuda, Y. Yamada and K. Mizusawa: Jpn. J. Appl. Phys. 36 (1997), p.7669.

Google Scholar

[20] T. Wada and H. Fujimoto: Jpn. J. Appl. Phys. 37 (1998), p.6998.

Google Scholar

[21] T. Wada and H. Fujimoto: phys. Stat. sol. (c). 0, No2 (2003) p.788.

Google Scholar

[22] T. Wada and H. Fujimoto: Jpn. J. Appl. Phys. 38 (1999), p.7144.

Google Scholar

[23] J. H. Cahn: J. Appl. Phys. 30 (1959), p.1310.

Google Scholar

[24] Stopping Power for Electron and Positrons, ICRU Rep 37 (Int. Commission on Radiation Units and Measurements, Bethesda, MD1984).

Google Scholar

[25] R. R. Hasiguti. J. Phys: Soc. Jpn. 21(1966), pp. (1927).

Google Scholar

[26] W. Frank, A. Seeger and U. Goesele: Defects in Semiconductors (North Holland, Amsterdam, 1981), p.31.

Google Scholar

[27] T. Wada and H. Fujimoto: phys. Stat. sol. (c) 0, No. 2 (2003), p.780.

Google Scholar

[28] J. D. Weeks, J. C. Tully and L. C. Kimerling: Phys. Rev. 12 (1975), p.3286.

Google Scholar

[29] Y. Shinozuka: Materials Science Forum 83-87 (1992), p.527.

Google Scholar

[30] H. Sugiyama: Bull. Electrotech. Lab. 34 (1970), p.573.

Google Scholar

[31] T. Wada, T. Nakamura, A. Maruyama, Y. Fukuoka and T. Arizumi: Jpn. J. Appl. Phys., 6 No. 1 (1967), p.71.

Google Scholar

[32] E. G. Wikner: Phys. Rev. 137 (1965), pp. A294.

Google Scholar

[33] T. Wada, H. Fujimoto and S. Asada: Jpn. J. Appl. Phys., Part1, Vol. 139 (2000), p.7019.

Google Scholar

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