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Defect and Diffusion Forum
Vols. 210-212

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Vols. 208-209

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Vols. 206-207

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 210-212

Defect and Diffusion Forum Vols. 210-212

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.210-212

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Table of Contents

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Paper Title Page

Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy

Authors: P.K. Giri

1

Optimization of Off-Oriented Ge Substrates for MOVPE-Grown GaAs Solar Cells

Authors: M.K. Hudait, S.B. Krupanidhi

15

On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation

Authors: Liudmila I. Fedina

21

Cavity Formation in Helium-Implanted Silicon - Temperature Dependence

Authors: Jean François Barbot, Erwan Oliviero, Marie-Laure David, Sophie Rousselet, Marie France Beaufort, A. van Veen

37

Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases

Authors: Leonid Burakovsky, Dean L. Preston

43

Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation

Authors: Irina V. Belova, Graeme E. Murch

55

Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors

Authors: A. Aydinli, N.M. Gasanly

61

Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics

Authors: L. Wang, C.S. Murthy, P. Clancy

71

Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy

Authors: Hoon Young Cho

81

Redistribution of Point Defects in the Crystalline Lattice of a Semiconductor in an Inhomogeneous Temperature Field

Authors: Arthur Medvid

89

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