Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy

Abstract:

Article Preview

Info:

Periodical:

Defect and Diffusion Forum (Volumes 210-212)

Edited by:

D.J. Fisher

Pages:

1-14

DOI:

10.4028/www.scientific.net/DDF.210-212.1

Citation:

P.K. Giri "Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy", Defect and Diffusion Forum, Vols. 210-212, pp. 1-14, 2002

Online since:

November 2002

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.