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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 210-212Defect States in InAs Quantum Dots Characterized...

Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy

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Defects and Diffusion in Semiconductors V

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Periodical:

Defect and Diffusion Forum (Volumes 210-212)

Pages:

81-88

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.210-212.81

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Online since:

November 2002

Authors:

Hoon Young Cho

Keywords:

Deep Level Defect, GaAs, InAs, Molecular Beam Epitaxy, PICTS, Quantum Dot (QD)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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