Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases
p.43
p.43
Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation
p.55
p.55
Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors
p.61
p.61
Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics
p.71
p.71
Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
p.81
p.81
Redistribution of Point Defects in the Crystalline Lattice of a Semiconductor in an Inhomogeneous Temperature Field
p.89
p.89
Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces
p.103
p.103
A Simple Method for Determining the Bascie Diffusion Parameters of Dopants using an Analytical Form of the Concentration Profile
p.113
p.113
An Exact Formula for the Effective Diffusion Coefficient of Dopants in Semiconductors
p.123
p.123
A Simple Method for Determining the Bascie Diffusion Parameters of Dopants using an Analytical Form of the Concentration Profile
Abstract:
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Periodical:
Defect and Diffusion Forum (Volumes 210-212)
Pages:
113-122
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Online since:
November 2002
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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