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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 210-212Monte Carlo Theoretical Study of Defect Generation...

Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces

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Defects and Diffusion in Semiconductors V

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Periodical:

Defect and Diffusion Forum (Volumes 210-212)

Pages:

103-112

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.210-212.103

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Online since:

November 2002

Authors:

Takashi Nakayama

Keywords:

Antisites, Defect, Growth, Heteroepitaxy, Heterovalent, Interface, Monte-Carlo Simulation, Surface, Vacancy, ZnSe/GaAs

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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