On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
p.21
p.21
Cavity Formation in Helium-Implanted Silicon - Temperature Dependence
p.37
p.37
Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases
p.43
p.43
Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation
p.55
p.55
Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors
p.61
p.61
Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics
p.71
p.71
Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
p.81
p.81
Redistribution of Point Defects in the Crystalline Lattice of a Semiconductor in an Inhomogeneous Temperature Field
p.89
p.89
Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces
p.103
p.103
Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Defect and Diffusion Forum (Volumes 210-212)
Pages:
61-70
Citation:
Online since:
November 2002
Authors:
Keywords:
Price:
Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: