On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation

Abstract:

Article Preview

Info:

Periodical:

Defect and Diffusion Forum (Volumes 210-212)

Edited by:

D.J. Fisher

Pages:

21-36

DOI:

10.4028/www.scientific.net/DDF.210-212.21

Citation:

L. I. Fedina "On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation", Defect and Diffusion Forum, Vols. 210-212, pp. 21-36, 2002

Online since:

November 2002

Export:

Price:

$35.00

In order to see related information, you need to Login.