Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy
p.1
p.1
Optimization of Off-Oriented Ge Substrates for MOVPE-Grown GaAs Solar Cells
p.15
p.15
On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
p.21
p.21
Cavity Formation in Helium-Implanted Silicon - Temperature Dependence
p.37
p.37
Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases
p.43
p.43
Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation
p.55
p.55
Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors
p.61
p.61
Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics
p.71
p.71
Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
p.81
p.81
On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
Abstract:
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Periodical:
Defect and Diffusion Forum (Volumes 210-212)
Pages:
21-36
Citation:
Online since:
November 2002
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Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
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