Defects and Diffusion in Semiconductors - An Annual Retrospective VII

Volumes 230-232

doi: 10.4028/

Paper Title Page

Authors: William M. Vetter

Abstract: Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in...

Authors: Stephen J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, Y.H. Heo, M. Ivill, D.P. Norton, Yong Duk Park
Authors: L.V. Borkovska, R. Beyer, M. Hoffmann, A. Holzhey, N. Korsunska, Yu.G. Sadofyev, Joerg Weber

Abstract: In this chapter we present the results of the photoluminescent and optical investigations of the influence of cation vacancy-related defects...

Authors: R.Ya. Golovchak, Oleg I. Shpotyuk

Abstract: A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous...

Authors: N. Martsinovich, A.L. Rosa, M.I. Heggie, Patrick R. Briddon

Abstract: We use DFT calculations to investigate the problem of hydrogen aggregation in silicon. We study atomic structures of finite hydrogen...

Authors: O. Yastrubchak, T. Wosiński, J.Z. Domagała, E. Łusakowska

Abstract: Partially relaxed III–V heterostructures: GaAs/InGaAs and InP/InAlAs/InGaAs, with a small lattice mismatch, grown using molecular beam...

Authors: Olivier Palais, P. Hidalgo

Abstract: This paper describes the “pairing - dissociation” behaviour of metal-acceptor pairs and proposes a method to measure metal concentrations in...


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