Defects and Diffusion in Semiconductors - An Annual Retrospective VII
Paper Title Page
Abstract: Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in...
Abstract: In this chapter we present the results of the photoluminescent and optical investigations of the influence of cation vacancy-related defects...
Abstract: A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous...
Abstract: We use DFT calculations to investigate the problem of hydrogen aggregation in silicon. We study atomic structures of finite hydrogen...
Abstract: Partially relaxed III–V heterostructures: GaAs/InGaAs and InP/InAlAs/InGaAs, with a small lattice mismatch, grown using molecular beam...
Abstract: This paper describes the “pairing - dissociation” behaviour of metal-acceptor pairs and proposes a method to measure metal concentrations in...