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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 230-232Calculating the Properties of Defects in...

Calculating the Properties of Defects in Semiconductors at Finite Temperatures

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Defects and Diffusion in Semiconductors - An Annual Retrospective VII

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Periodical:

Defect and Diffusion Forum (Volumes 230-232)

Pages:

47-54

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.230-232.47

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Cite this paper

Online since:

November 2004

Authors:

Stefan K. Estreicher, Mahdi Sanati

Keywords:

Defect, Free Energy, Impurity, Semiconductor, Silicon, Theory, Thermodynamic

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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