The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry

Abstract:

Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in semiconductor-grade silicon carbide crystals. Capable of mapping the distribution of axial dislocations across a wafer's area (notably the devastating micropipe defect), it can also provide information on their natures. Under favorable conditions, various other types of defect may be observed in back-reflection topographs of SiC, among which are subgrain boundaries, inclusions, and basal plane dislocations. Observed defect images in backreflection topographs may be simulated using relatively simple computer algorithms based on ray tracing. It has been possible to use back-reflection topographs of SiC substrates with device structures deposited upon them to relate the incidence of defects to device failure.

• Periodical: Defect and Diffusion Forum (Volumes 230-232)
• Pages: 1-16
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.230-232.1
• Online since: November 2004
• Authors: William M. Vetter
• Keywords: Dislocation, Inclusion, Micropipe, Silicon Carbide (SiC), X-Ray Topography

References

[1] M. Dudley, S. Wang, W. Huang, C. H. Carter, Jr., V. F. Tsvetkov and C. Fazi: J. Phys. D: Appl. Phys., Vol. 28, (1995), p. A63.

[2] A. R. Verma and P. Krishna: Polymorphism and Polytypism in Crystals (John Wiley & Sons, New York 1996).

[3] W. M. Vetter: Characterization of Dislocation Structures in Silicon Carbide Single Crystals, Ph. D. thesis, State University of New York at Stony Brook, (1999).

[4] W. M. Vetter and M. Dudley: J. Appl. Cryst., Vol. 31, (1998).

[5] S. Wang: Characterization of Growth Defects in Silicon Carbide Single Crystals by Synchrotron X-ray Topography, Ph. D. Thesis, State University of New York at Stony Brook, (1995).

[6] J. Miltat: Characterization of Crystal Growth Defects by X-Ray Methods, edited by B. K. Tanner and D. K. Bowen (Plenum Press, New York 1980), p.401.

[7] G. -D., Yao, M. Dudley and J. Wu: J. X-ray Sci. Tech., Vol. 2, (1990), p.195.

[8] R. C. Glass, D. Henshall, V. F. Tsvetkov and C. H. Carter, Jr.: MRS Bull., Vol. 22/3, (1997), p.30.

[9] M. Dudley, W. Si, S. Wang, C. Carter, Jr., R. Glass and V. Tsvetkov: Il Nuovo Cimento, Vol. 19D, (1997), p.153.

[10] X. R. Huang, M. Dudley, W. M. Vetter, W. Huang, S. Wang and C. H. Carter, Jr.: Appl. Phys. Lett., Vol. 74, (1999), p.353.

[11] X. R. Huang, M. Dudley, W. M. Vetter, W. Huang, W. Si and C. H. Carter, Jr.: J. Appl. Cryst., Vol. 32, (1999), p.516.

[12] W. M. Vetter and M. Dudley: J. Appl. Cryst., Vol. 37, (2004), p.200.

[13] S. N. Gorin and L. M. Ivanova: Phys. Status Solidi, Vol. B202, (1997), p.221.

[14] R. C. Glass, L. O. Kjellberg, V. F. Tsvetkov, J. E. Sundgren and E. Janzen: J. Cryst. Growth, Vol. 132, (1993), p.504.

[15] T. A. Kuhr, W. M. Vetter, M. Dudley and M. Skowronski: Materials Science Forum, Vol. 338- 342, (2000), p.473.

[16] J. P. Bergman, L. Storasta, F. H. C. Carlsson, S. Sridhara, B. Magnusson and E. Janze'n: Physica B, Vol. 308, (2001), p.675.

DOI: 10.1016/s0921-4526(01)00790-6

[17] P. G. Neudeck and J. A. Powell: IEEE Electron Device Lett., Vol. 15, (1994), p.63.

[18] U. Zimmermann, J. Österman, D. Kuylenstierna, A. Hallén, A. O. Konstantinov, W. M. Vetter and M. Dudley: J. Appl. Phys., Vol. 93, (2003), p.611.

DOI: 10.1063/1.1525065

[19] P. G. Neudeck, W. Huang and M. Dudley: Solid-State Electronics, Vol. 42, (1998), p.2157.

[20] P. G. Neudeck, W. Huang and M. Dudley: IEEE Trans. Electron Dev., Vol. 46, (1999), p.478.

[21] P. G. Neudeck and C. Fazi: IEEE Trans. Electron Dev., Vol. 46, (1999), p.485.

[22] M. Dudley, W. M. Vetter and P. G. Neudeck: J. Cryst. Growth, Vol. 240, (2002), p.22.