Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors
p.67
p.67
First Principles Calculations of Hydrogen Aggregation in Silicon
p.81
p.81
Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures
p.93
p.93
On the Photo-Ionization Cross-Section of DX Centers
p.101
p.101
Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy
p.111
p.111
Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques
p.125
p.125
Classification of Defects on Semiconductor Wafers Using Priority Rules
p.135
p.135
Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
p.149
p.149
Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon
p.177
p.177
Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy
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Periodical:
Defect and Diffusion Forum (Volumes 230-232)
Pages:
111-124
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Online since:
November 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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