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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 230-232Mechanism of Formation and Physical Classification...

Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon

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Defects and Diffusion in Semiconductors - An Annual Retrospective VII

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Periodical:

Defect and Diffusion Forum (Volumes 230-232)

Pages:

177-198

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.230-232.177

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Online since:

November 2004

Authors:

V.I. Talanin, I.E. Talanin

Keywords:

Carbon, Carbon-Interstitial Aggregates, Classification, Grown-In Microdefects, Intrinsic Point Defects (IPD), Mechanism of Formation, Oxygen, Oxygen-Vacancy Aggregates

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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