Paper Titles

On the Photo-Ionization Cross-Section of DX Centers
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Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy
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Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques
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Classification of Defects on Semiconductor Wafers Using Priority Rules
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Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
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Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon
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Nitrogen in Silicon
p.199

Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination
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Defect Engineering in Impurity-Free Disordered (Al)GaAs for Optoelectronic Devices Application
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 230-232Nitrogen in Silicon

Nitrogen in Silicon

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Defects and Diffusion in Semiconductors - An Annual Retrospective VII

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Periodical:

Defect and Diffusion Forum (Volumes 230-232)

Pages:

199-220

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.230-232.199

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Online since:

November 2004

Authors:

De Ren Yang, Xuegong Yu

Keywords:

Nitrogen Doping, Oxygen Precipitation, Silicon, Void

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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