Defects and Diffusion in Semiconductors - an Annual Retrospective VIII
Paper Title Page
Abstract: The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework...
Abstract: We present a unified approach to description of all the stages of shaping of a highabsorption state in a resonatorless exciton bistable...
Abstract: Dislocations and impurities in silicon have been widely investigated since many years, nevertheless many questions on this subject remain...
Abstract: Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon....
Abstract: A cluster comprising of indium, antimony and a vacancy in silicon is analysed using the planewave pseudopotential technique. This cluster...
Abstract: In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by...