Defects and Diffusion in Semiconductors - an Annual Retrospective VIII

Volumes 245-246

doi: 10.4028/

Paper Title Page

Authors: A.P. Dolgolenko, G.P. Gaidar

Abstract: The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework...

Authors: Yuriy V. Gudyma, Ivanna V. Kruglenko

Abstract: We present a unified approach to description of all the stages of shaping of a highabsorption state in a resonatorless exciton bistable...

Authors: Daniela Cavalcoli, Anna Cavallini

Abstract: Dislocations and impurities in silicon have been widely investigated since many years, nevertheless many questions on this subject remain...

Authors: S.K. Chaudhuri, P.V. Rajesh, S.S. Ghugre, D. Das

Abstract: Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon....

Authors: M.M. De Souza, Jonathan P. Goss

Abstract: A cluster comprising of indium, antimony and a vacancy in silicon is analysed using the planewave pseudopotential technique. This cluster...

Authors: H.H. Radamson, J. Hållstedt

Abstract: In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by...


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