Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

Abstract:

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In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 245-246)

Edited by:

David J. Fisher

Pages:

39-50

DOI:

10.4028/www.scientific.net/DDF.245-246.39

Citation:

H.H. Radamson and J. Hållstedt, "Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition", Defect and Diffusion Forum, Vols. 245-246, pp. 39-50, 2005

Online since:

October 2005

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Price:

$35.00

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