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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 245-246Growth and Characterization of Boron-Doped...

Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition

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Abstract:

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

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Defect and Diffusion Forum (Volumes 245-246)

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39-50

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https://doi.org/10.4028/www.scientific.net/DDF.245-246.39

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Online since:

October 2005

Authors:

H.H. Radamson, J. Hållstedt

Keywords:

Boron Doping, Chemical Vapor Deposition (CVD), Epitaxy, SiGeC Alloys

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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