Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors

S.K. Chaudhuri; P.V. Rajesh; S.S. Ghugre; D. Das

doi:10.4028/www.scientific.net/DDF.245-246.23

Paper Titles

The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons
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Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System
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On the Interaction of Dislocations with Impurities in Silicon
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Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors
p.23

DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon
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Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition
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Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide
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Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors

Abstract:

Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon. Oxygen enrichment of the wafer was done by high-energy (140 MeV) oxygen ion implantation. Annealing of the irradiated silicon wafer was done to minimize the irradiation-induced defect concentration. Positron annihilation lifetime studies were used to select the annealing temperature. A comparative study was carried out among various SSB detectors made from as-grown, as-irradiated and annealed silicon wafers. Detector made from the annealed wafer worked satisfactorily and its performance was comparable with that of a detector made from as-grown crystal.

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Periodical:

Defect and Diffusion Forum (Volumes 245-246)

Pages:

23-28

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.245-246.23

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Online since:

October 2005

Authors:

S.K. Chaudhuri, P.V. Rajesh, S.S. Ghugre, D. Das

Keywords:

Annealing of Defects, Positron Annihilation Spectroscopy, Silicon Surface Barrier Detectors

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References

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