Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors
Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon. Oxygen enrichment of the wafer was done by high-energy (140 MeV) oxygen ion implantation. Annealing of the irradiated silicon wafer was done to minimize the irradiation-induced defect concentration. Positron annihilation lifetime studies were used to select the annealing temperature. A comparative study was carried out among various SSB detectors made from as-grown, as-irradiated and annealed silicon wafers. Detector made from the annealed wafer worked satisfactorily and its performance was comparable with that of a detector made from as-grown crystal.
David J. Fisher
S.K. Chaudhuri et al., "Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors", Defect and Diffusion Forum, Vols. 245-246, pp. 23-28, 2005