The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons
p.1
p.1
Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System
p.9
p.9
On the Interaction of Dislocations with Impurities in Silicon
p.15
p.15
Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors
p.23
p.23
DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon
p.29
p.29
Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition
p.39
p.39
Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide
p.51
p.51
Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide
Abstract:
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Periodical:
Defect and Diffusion Forum (Volumes 245-246)
Pages:
51-0
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Online since:
October 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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