The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons

Abstract:

The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size distribution of defect clusters created by fast neutrons of WWR-M reactor, by the transformation of energy spectrum of the primary knock-on atom in n-Si (FZ, Cz). Threshold energy of defect clusters formation 4.7 keV by comparing n-Si crystals irradiated by deuterons and fast-pile neutrons was calculated.

• Periodical: Defect and Diffusion Forum (Volumes 245-246)
• Pages: 1-8
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.245-246.1
• Online since: October 2005
• Authors: A.P. Dolgolenko, G.P. Gaidar
• Keywords: Defect Cluster, Fast-Pile Neutron, Irradiation, Silicon

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