The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons
The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size distribution of defect clusters created by fast neutrons of WWR-M reactor, by the transformation of energy spectrum of the primary knock-on atom in n-Si (FZ, Cz). Threshold energy of defect clusters formation 4.7 keV by comparing n-Si crystals irradiated by deuterons and fast-pile neutrons was calculated.
David J. Fisher
A.P. Dolgolenko and G.P. Gaidar, "The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons", Defect and Diffusion Forum, Vols. 245-246, pp. 1-8, 2005