Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy

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Periodical:

Defect and Diffusion Forum (Volumes 221-223)

Edited by:

D.J. Fisher

Pages:

123-132

DOI:

10.4028/www.scientific.net/DDF.221-223.123

Citation:

B. Pivac et al., "Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy ", Defect and Diffusion Forum, Vols. 221-223, pp. 123-132, 2003

Online since:

November 2003

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$35.00

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