Paper Titles

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
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Modeling of Dopant and Defect Interactions in Si Process Simulators
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Spectroscopic Study of Magnesium-Related Impurities in Silicon
p.41

Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
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Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
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A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism
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In-Diffusion Concentration Profiles of Dopants in Semiconductors
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Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
p.123

Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 221-223Recent Advances in the Measurement of Interstitial...

Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy

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Defects and Diffusion in Semiconductors VI

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Periodical:

Defect and Diffusion Forum (Volumes 221-223)

Pages:

123-132

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.221-223.123

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Online since:

November 2003

Authors:

B. Pivac, A. Sassella, A. Borghesi

Keywords:

Infra-Red Spectroscopy, Interstitial Oxygen, Silicon Wafer, Spurious Data

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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