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Abstracts
SiC/SiO2: Interface Defects
a.149
TiC: Twins
a.150
Ti3SiC2: Grain Boundaries and Stacking Faults
a.151
WC: Grain Boundaries
a.152
W(N,C): Cu Diffusion
a.153
AlGaN: Ion Implantation and Point Defects
a.154
AlGaN: Dislocations
a.155
AlGaN: Dislocations
a.156
AlGaN: Dislocations
a.157
HomeDefect and Diffusion ForumDefects and Diffusion in Ceramics VIW(N,C): Cu Diffusion

W(N,C): Cu Diffusion

Page: A153

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