Ti3SiC2: Grain Boundaries and Stacking Faults
a.151
WC: Grain Boundaries
a.152
W(N,C): Cu Diffusion
a.153
AlGaN: Ion Implantation and Point Defects
a.154
AlGaN: Dislocations
a.155
AlGaN: Dislocations
a.156
AlGaN: Dislocations
a.157
AlGaN: Point Defects
a.158