Anionic and Cationic Diffusion in Ionic Conducting Oxides

Georgette Petot-Ervas; C. Petot; Jean Marc Raulot; J. Kusinski

doi:10.4028/www.scientific.net/DDF.237-240.843

Paper Titles

Stress Development during the Reactive Formation of Silicide Films
p.801

Bifurcation and Trifurcation of a Kirkendall Plane during Multiphase Interdiffusion
p.813

Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases
p.825

Nucleation and Growth during Early Stages of Reactive Diffusion
p.837

Anionic and Cationic Diffusion in Ionic Conducting Oxides
p.843

Kinetics of Competitive Phase Growth in Cu-Ni-Sn System
p.849

Crack Formation Induced by Boundary Wetting
p.855

Analysis of Atomic Concentration Profiles in Interdiffusion and Access to Non-Equilibrium Vacancy Concentrations
p.861

Growth Kinetics and Silicon Diffusivity in MoSi₂ and WSi₂ Disilicides
p.867

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Anionic and Cationic Diffusion in Ionic Conducting Oxides

Abstract:

This paper concerns an analysis of the transport processes at high temperature in anionic conducting oxides subjected to a chemical potential gradient or an applied electrical field. The general equations are given. The principle of the cationic kinetic demixing under a “generalized“ thermodynamical potential gradient is reviewed. Experimental results obtained with yttria-doped zirconia are reported. An experimental procedure for the determination of the oxygen diffusion coefficient in ionic and semiconducting oxides is also described. The results obtained with yttriastabilized zirconia are compared to both self diffusion and conductivity data. This has allowed us to obtain information concerning the defect structure.