Abstracts

Si/SiO2: Point Defects
a.491

Si-C: Point Defects
a.492

SiC: B Diffusion
a.493

SiC: B Diffusion and Point Defects
a.494

SiC: C Surface Diffusion
a.495

SiC: C Surface Diffusion
a.496

SiC: Electron Irradiation and Point Defects
a.497

SiC: Ion Bombardment, Point Defects and Defect Annealing
a.498

SiC: Ion Implantation, Dislocations, Point Defects and Stacking Faults
a.499

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SiC: C Surface Diffusion

Page: A495