Raman Investigation of Stress for Shallow Trench

Abstract:

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A trench is used as a storage capacitor in dynamic memory (DRAM) technologies (deep storage trenches), or as an isolation structure in CMOS, bipolar and BiCMOS technologies. But a shallow trench structure has also been shown to be a major factor in substrate defect generation during processing. Such defect generation is directly related to mechanical stresses existing around the trench. This stress can be monitored, using Raman spectroscopy, to a stress resolution of 10MPa and a spatial resolution of 0.2μm. In this paper, a trench structure is designed and fabricated, and the test results for local stresses within the trench are shown to be in good correspondence with theory.

Info:

Periodical:

Edited by:

David J. Fisher

Pages:

1-6

DOI:

10.4028/www.scientific.net/DDF.265.1

Citation:

S. B. Sang et al., "Raman Investigation of Stress for Shallow Trench", Defect and Diffusion Forum, Vol. 265, pp. 1-6, 2007

Online since:

May 2007

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$35.00

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