Raman Investigation of Stress for Shallow Trench

Abstract:

A trench is used as a storage capacitor in dynamic memory (DRAM) technologies (deep storage trenches), or as an isolation structure in CMOS, bipolar and BiCMOS technologies. But a shallow trench structure has also been shown to be a major factor in substrate defect generation during processing. Such defect generation is directly related to mechanical stresses existing around the trench. This stress can be monitored, using Raman spectroscopy, to a stress resolution of 10MPa and a spatial resolution of 0.2μm. In this paper, a trench structure is designed and fabricated, and the test results for local stresses within the trench are shown to be in good correspondence with theory.

• Periodical: Defect and Diffusion Forum (Volume 265)
• Pages: 1-6
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.265.1
• Online since: May 2007
• Authors: Sheng Bo Sang, Chen Yang Xue, Wen Dong Zahng, Ji Jun Xiong

References

[1] Takano Y and Kozuka H: 1983 Proc. 14th Int. Conf. on Solid State Devices and Materials (SSDM) (Tokyo, Japan) (Japan Journal of Applied Physics, 22 553-6).

[2] Takami Y, Isomae S, Sagara K and Kure T: Journal of the Electrochemical Society, 135 (1988) 726-30.

[3] Stiffler S R, Lasky J B, Koburger C W and Berry W S: IEEE Transactions on Electron Devices, 37 (1990) 1253-8.

DOI: 10.1109/16.108186

[4] Isomae S and Aoki S: 1986 Extended Abstracts of the 18 th Int. Conf. on Solid State Devices and Materials (SSDM) (Tokyo, Japan) pp.517-20.

[5] Matsuda S, Yoshino C, Nakajima H, Inou K, Yoshitomi S, Katsumata Y and Iwai H: 1994 Proc. 1994 Int. Electron Devices Meeting (IEDM) pp.885-8.

DOI: 10.1109/iedm.1994.383271

[6] Katsumata Y, Katakabe I, Itoh N, Tsukioka E, Yoshino C and Iwai H: 1991 IEEE 1991 Bipolar Circuits and Technology Meeting 113 pp.271-4.

DOI: 10.1109/bipol.1991.161001

[7] Itoh N, Yoshino V C, Matsuda S, Tsuboi Y, Inou K, Katsumata K and Iwai H: 1992 IEEE 1992 Bipolar Circuits and Technology Meeting 4. 7 pp.104-7.

DOI: 10.1109/bipol.1992.274073

[8] Hu S M: Journal of Applied Physics, 67 (1990) 1092-101.

[9] Stiffler S R and Cifuentes A O: IEEE Transactions on Electron Devices, 40 (1993) 557-63.

[10] Vasquez B and Theodore N D: 1992 Mater. Res. Soc. Symp. Proc. 262 725-30.

[11] Stiffler S R: Journal of Applied Physics, 68 (1990) 351-5.

[12] Chidambarrao D, Peng J P and Srinivasan G R: Journal of Applied Physics, 70 (1991) 4816-22.

[13] Nadahara S, Kambayashi S, Watanabe M and Nakakubo T: 1987 Extended Abstracts 19th Int. Conf. on Solid State Devices and Materials (SSDM) (Tokyo, Japan) pp.327-30.

DOI: 10.7567/ssdm.1987.c-8-6

[14] Flinn P A and Waychunas G A: Journal of. Vacuum Science & Technology, B6 (1988) 1749-55.

[15] Greenebaum B, Sauter A I, Flinn P A and Nix W D: Applied Physics Letters, 58 (1991) 1845-7.

[16] Dehaven P and Goldsmith C: 1993 Mater. Res. Soc. Symp. Proc. 308 343-8.

[17] Yamamoto N and Sakata S: 1989 Extended Abstracts of the 1989 Int. Conf. on Solid State Devices and Materials (SSDM) (Tokyo, Japan) pp.221-4, C-2-2.

[18] Armigliato A, Balboni R, De Wolf I, Frabboni S, Janssens K G F and Vanhellemont J: 1993 Inst. Phys. Conf. Ser. 134 pp.229-34.

[19] Kimoto K, Usami K, Sakata H and Tanaka M: Japan Journal of Applied Physics, 32 (1993) L211-L213.

[20] Bonera E, Fanciulli M, Batchelder D N: Applied Spectroscopy, 56 (2002), 560.

[21] Srikar V T, Swan, Anna K, Ünlü, M. Selim et al.: Micro-Raman Measurement of Bending Stresses in Micromachined Silicon Flexures, Journal of Microelectromechanical Systems, 12 (2003) 779-787.

DOI: 10.1109/jmems.2003.820280

[22] Kuzmany, H.: Solid-State Spectroscopy An Introduction, Springer-Verlag Berlin Heidelberg Germany, (1998).