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Abstracts
Dislocation Patterns and the Similitude Principle
a.556
Diffuse Interface Model for Structural Transitions of Grain Boundaries
a.557
Atomic Motion Governing Grain Boundary Migration
a.558
Reduction in Stacking-Fault Width in FCC Crystals
a.559
Stacking Faults and Twin Boundaries in FCC Crystals
a.560
Determination of Grain Boundary Stiffness
a.561
Destruction of Stacking Fault Tetrahedra by Interaction with Dislocations
a.562
Dynamic Recrystallisation of Low Stacking Fault Energy FCC Materials
a.563
Spatial Correlation of High-Energy Grain Boundaries in Polycrystals
a.564
HomeDefect and Diffusion ForumDefects and Diffusion in Metals IXStacking Faults and Twin Boundaries in FCC...

Stacking Faults and Twin Boundaries in FCC Crystals

Page: A560

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