Measurement of Oxide Barrier-Film Thickness of Al-Alloy by Electrochemical Impedance Spectroscopy at the Nanometre-Scale

Khaled Habib; K. Al-Muhanna; F. Al-Sabti; A. Al-Arbeed

doi:10.4028/www.scientific.net/DDF.268.1

Paper Titles

Measurement of Oxide Barrier-Film Thickness of Al-Alloy by Electrochemical Impedance Spectroscopy at the Nanometre-Scale
p.1

Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors
p.15

Structural Study of an Amorphous Cr65Nb35 Alloy Produced by Mechanical Alloying Using Reverse Monte Carlo Simulations
p.37

Matrix Description of Some Thermodynamic Properties of Multicomponent Alloys in Explicit Form
p.51

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 268Measurement of Oxide Barrier-Film Thickness of...

Measurement of Oxide Barrier-Film Thickness of Al-Alloy by Electrochemical Impedance Spectroscopy at the Nanometre-Scale

Abstract:

In the present work, the electrochemical behavior and the oxide barrier-film thickness of anodized aluminum-magnesium (Al-Mg) alloy were determined in the as-received and annealed conditions by using electrochemical techniques. Electrochemical parameters such as the polarization resistance, solution resistance, alternating-current (AC) impedance, and the doublelayer capacitance of the anodized Al-Mg alloy were determined in boric acid solutions, with 0 to 10%H3BO3, by using electrochemical impedance spectroscopic (EIS) methods. The oxide barrierfilm thickness of the anodized Al-Mg alloy was then deduced, from the electrochemical parameters obtained, as a function of the boric acid concentration (0 to 10%H3BO3). The optimum thickness of the oxide barrier-film was detected for as received samples (1.17nm) and for annealed samples (1.22nm) at a boric acid concentration of 4%H3BO3.