Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System

Csaba Cserháti; Györgyi Glodán; A. Csik; G.A. Langer; Z. Erdélyi; Z. Balogh; Dezső L. Beke

doi:10.4028/www.scientific.net/DDF.273-276.99

Paper Titles

The Enhanced Kinetics of Precipitation Effects in Ultra Fine Grained Mg Alloys Prepared by High Pressure Torsion
p.75

The Clustering of Cu Atoms in Neutron Irradiated Reactor Pressure Vessel Steels Studied by Positron Annihilation
p.81

Modeling of Flow and Transport Processes Occurred in a Typical Polymer Electrolyte Membrane Fuel Cell (PEMFC)
p.87

Limits to N-Type Doping in Ge: Formation of Donor-Vacancy Complexes
p.93

Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System
p.99

Intrinsic Diffusivities and Modeling of the Diffusion Multiples
p.105

Electro-Diffusion in Multicomponent Ion-Selective Membranes; Numerical Solution of the Coupled Nernst–Planck–Poisson Equations
p.113

Experimental and Numerical Study on Vapor Condensation of Wet Flue Gas in Chimney
p.119

Dynamic and Equilibrium Swelling of Biodegradable Starch-Based Superabsorbent Polymers
p.126

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 273-276Co Anomalous Growth Kinetics of the CoSi Reaction...

Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System

Abstract:

Solid state reactions between amorphous Si and crystalline Co have been investigated by 4W electrical resistance and TEM. Multilayered (with 10 periods of 5nm a-Si/5nm Co and 10 nma- Si/10nm Co layers) as well as tri-layered samples (20nm a-Si/3nmCoSi/6nm Co) were produced by magnetron sputtering and isothermally heat treated at different temperatures between 473 and 523K. From the time evolution of the normalized resistance the kinetics of the process were determined by fitting a power law, tk, and k was between 0.8 and 1. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the non-parabolic interface shifts on the nanoscale) will be discussed.