Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System

Abstract:

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Solid state reactions between amorphous Si and crystalline Co have been investigated by 4W electrical resistance and TEM. Multilayered (with 10 periods of 5nm a-Si/5nm Co and 10 nma- Si/10nm Co layers) as well as tri-layered samples (20nm a-Si/3nmCoSi/6nm Co) were produced by magnetron sputtering and isothermally heat treated at different temperatures between 473 and 523K. From the time evolution of the normalized resistance the kinetics of the process were determined by fitting a power law, tk, and k was between 0.8 and 1. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the non-parabolic interface shifts on the nanoscale) will be discussed.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 273-276)

Edited by:

Andreas Öchsner and Graeme E. Murch

Pages:

99-104

DOI:

10.4028/www.scientific.net/DDF.273-276.99

Citation:

C. Cserháti et al., "Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System", Defect and Diffusion Forum, Vols. 273-276, pp. 99-104, 2008

Online since:

February 2008

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$35.00

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