Limits to N-Type Doping in Ge: Formation of Donor-Vacancy Complexes

J. Coutinho; C. Janke; A. Carvalho; Sven Öberg; Vitor Torres; R. Jones; Patrick R. Briddon

doi:10.4028/www.scientific.net/DDF.273-276.93

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Limits to N-Type Doping in Ge: Formation of Donor-Vacancy Complexes
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Limits to N-Type Doping in Ge: Formation of Donor-Vacancy Complexes

Abstract:

Vacancies and interstitials in semiconductors play a fundamental role in both high temperature diffusion and low temperature radiation and implantation damage. In Ge, a seri- ous contender material for high-speed electronics applications, vacancies have historically been believed to dominate most diffusion related phenomena such as self-diffusivity or impurity mi- gration. This is to be contrasted with silicon, where self-interstitials also play decisive roles, despite the similarities in the chemical nature of both materials. We report on density func- tional calculations of the formation and properties of vacancy-donor complexes in germanium. We predict that most vacancy-donor aggregates are deep acceptors, and together with their high solubilities, we conclude that they strongly contribute for inhibiting donor activation levels in germanium.