Slow Positron Annihilation in Ion-Implanted Silicon

Girjesh Singh; S.B. Shrivastava; M.H. Rathore

doi:10.4028/www.scientific.net/DDF.280-281.21

Paper Titles

Synthesis and Characterization of Ba Defective ZnO Nano-Particle
p.1

Diffusion Formation of Silicide Phases in Ni/Si(001) Nanodimensional Film System
p.9

Investigations of the EPR Parameters and Local Structure for one Cu²⁺ Center in CdS
p.15

Slow Positron Annihilation in Ion-Implanted Silicon
p.21

Semi-Empirical Parameterization of Interatomic Interactions and Kinetics of the Atomic Ordering in Ni-Fe-C Permalloys and Elinvars
p.29

Formation of Point Defects in Dilute FCC Alloys
p.79

Mechanical Testing of Diffusion Bonded Metallic Hollow Sphere Structure (MHSS)
p.85

Towards a Correlation between High-Temperature Creep and Volume Diffusion for Equiatomic NiTi Alloys
p.97

Structural Characterisation of Diffusion-Bonded Hollow Sphere Structures
p.105

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 280-281Slow Positron Annihilation in Ion-Implanted...

Slow Positron Annihilation in Ion-Implanted Silicon

Abstract:

The mechanism of slow positron annihilation in ion-implanted Si has been discussed in terms of the Diffusion-Trapping model (DTM). The trapping of positron has been considered in native vacancies (monovacancies) and ion induced vacancies i.e. vacancy clusters. The model has been used to calculate the Doppler broadening line shape parameter (S-parameter) as a function of incident positron energy for different ion-implanted Si. It has been found that at lower energies the monovacancies and vacancy clusters both contribute to the S-parameter while, with the increase in positron energy the vacancy clusters are reduced. The S-parameter is found to be dependent on the fluency of the implanted ions.