Paper Title:
Slow Positron Annihilation in Ion-Implanted Silicon
  Abstract

The mechanism of slow positron annihilation in ion-implanted Si has been discussed in terms of the Diffusion-Trapping model (DTM). The trapping of positron has been considered in native vacancies (monovacancies) and ion induced vacancies i.e. vacancy clusters. The model has been used to calculate the Doppler broadening line shape parameter (S-parameter) as a function of incident positron energy for different ion-implanted Si. It has been found that at lower energies the monovacancies and vacancy clusters both contribute to the S-parameter while, with the increase in positron energy the vacancy clusters are reduced. The S-parameter is found to be dependent on the fluency of the implanted ions.

  Info
Periodical
Defect and Diffusion Forum (Volumes 280-281)
Edited by
David J. Fisher
Pages
21-28
DOI
10.4028/www.scientific.net/DDF.280-281.21
Citation
G. Singh, S.B. Shrivastava, M.H. Rathore, "Slow Positron Annihilation in Ion-Implanted Silicon", Defect and Diffusion Forum, Vols. 280-281, pp. 21-28, 2008
Online since
November 2008
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Price
$35.00
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