Formation of Point Defects in Dilute FCC Alloys

Amitava Ghorai

doi:10.4028/www.scientific.net/DDF.280-281.79

Paper Titles

Diffusion Formation of Silicide Phases in Ni/Si(001) Nanodimensional Film System
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Investigations of the EPR Parameters and Local Structure for one Cu²⁺ Center in CdS
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Slow Positron Annihilation in Ion-Implanted Silicon
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Semi-Empirical Parameterization of Interatomic Interactions and Kinetics of the Atomic Ordering in Ni-Fe-C Permalloys and Elinvars
p.29

Formation of Point Defects in Dilute FCC Alloys
p.79

Mechanical Testing of Diffusion Bonded Metallic Hollow Sphere Structure (MHSS)
p.85

Towards a Correlation between High-Temperature Creep and Volume Diffusion for Equiatomic NiTi Alloys
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Structural Characterisation of Diffusion-Bonded Hollow Sphere Structures
p.105

Dislocation Recovery in Casting Alloy by Positron Lifetime Technique
p.113

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 280-281Formation of Point Defects in Dilute FCC Alloys

Formation of Point Defects in Dilute FCC Alloys

Abstract:

Using pseudopotential approach, vacancy formation energy , different non-split interstitial formation energies and binding energy for the vacancy-impurity pair and that for interstitial impurity over host have been calculated in some cubic fcc metal systems, viz. copper, silver, gold and lead using Ashcroft's potential and Taylor's exchange and correlation function with standard (AT) and fitted to (ATF) and also Heine-Abarenkov’s model potential and same exchange and correlations (HAT). It is difficult to have a universal value for all types of atomic property calculations. The results show that ATF and HAT combinations are better in comparison to AT. Also, the substitutional impurity adjacent to a vacancy is found to be more loosely bound than the interstitial impurity in fcc metals.