Sedimentation of Impurity Atoms in InSb Semiconductor under a Strong Gravitational Field

Yusuke Iguchi; Masao Ono; Satoru Okayasu; Tsutomu Mashimo

doi:10.4028/www.scientific.net/DDF.289-292.319

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The Electrolytic Actuator-An Effect Dominated by Dissipative Currents
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Sedimentation of Impurity Atoms in InSb Semiconductor under a Strong Gravitational Field
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Dynamics of Mobile Oxygen Ions in Disordered Pyrochlore-Type Oxide-Ion Conductors
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Sedimentation of Impurity Atoms in InSb Semiconductor under a Strong Gravitational Field

Abstract:

An atomic-scale graded structure has been formed by sedimentation of substitutional atoms under an ultra-strong gravitational field of 1 million G level in alloys and compounds. In this study, we investigate the sedimentation of impurity atoms in semiconductor materials under a strong gravitational field. High-temperature ultracentrifuge experiments (0.59×106 G, 400°C, 60 hours) have been performed on an InSb single crystal wafer which surface was coated with Ge by means of Physical Vapor Deposition (PVD). It was observed that the penetration depth of diffused Ge atoms under the gravitational field was several times larger than under terrestrial field at the same temperatures.