Characterization of Intermetallic Layer with Nanoresolution Using X-Ray Standing Wave Technique

Abstract:

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X-ray standing wave technique has been used to measure the kinetics of CoSi intermetallic phase growth in a-Si/Co/a-Si sandwich structure. The a-Si/Co/a-Si arrangement were placed into a waveguide structure formed by two Ta films. X-ray fluorescence and extended X-ray absorption fine structure analysis has been used in a combination with X-ray standing wave technique for depth profiling with sub-nanometer resolution of specimens annealed at 493K for different annealing time. The position and the thickness of the growing CoSi intermetallic phase have been monitored.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 289-292)

Edited by:

A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo

Pages:

369-375

DOI:

10.4028/www.scientific.net/DDF.289-292.369

Citation:

C. Cserháti et al., "Characterization of Intermetallic Layer with Nanoresolution Using X-Ray Standing Wave Technique", Defect and Diffusion Forum, Vols. 289-292, pp. 369-375, 2009

Online since:

April 2009

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Price:

$35.00

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