Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd

Z. Balogh; Z. Erdélyi; Dezső L. Beke; Alain Portavoce; Christophe Girardeaux; Jean Bernardini; Andree Rolland

doi:10.4028/www.scientific.net/DDF.289-292.763

Paper Titles

Concentration Characteristics of Diffusion-Induced Recrystallization
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Jump Frequencies of Cd Tracer Atoms in L1₂ Lanthanide Gallides
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Computer Simulation of Diffusion in Dilute Al-Fe Alloys
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Following the First Steps of UV Degradation of High Density Polyethylene by Fluorescence Spectroscopy
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First-Principle Calculation of Monovacancy and Divacancy Interactions with Atomic Oxygen in Nickel: Thermal Expansion Effects
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Motion of Cadmium Tracer Atoms in Al₁₁R₃ Phases (R=La,Ce,Pr)
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Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd
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Oxygen Diffusion and Surface Exchange in Yttria-Stabilized Zirconia and Gadolinia-Doped Ceria Ceramics at Low Temperatures
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Doping Effect in Nickel Oxide
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Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd

Abstract:

Diffusion controlled processes play a crucial role in the degradation of technical materials. At low temperatures the most significant of them is the diffusion along grain boundaries. In thin film geometry one of the best methods for determining the grain boundary (GB) diffusion coefficient of an impurity element is the Hwang-Balluffi method, in which a surface sensitive technique is used to follow the surface accumulation kinetics. Results of grain boundary diffusion measurements, carried out in our laboratory by this method in three different materials systems (Ag/Pd, Ag/Cu and Au/Ni) are reviewed. In case of Ag diffusion along Pd GBs the surface accumulation was followed by AES method. The data points can be well fitted by an Arrhenius function with an activation energy Q=0.99eV