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Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films

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Abstract:

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

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Diffusion in Solids and Liquids V View Preview

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Periodical:

Defect and Diffusion Forum (Volumes 297-301)

Pages:

849-852

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.297-301.849

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Online since:

April 2010

Authors:

Toshio Takeuchi, Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

Keywords:

Gallium Oxide, High Resolution X-Ray Photoelectron Spectroscopy, Nanolayered Structure, Radio-Frequency Magnetron Sputtering (RF-MS), Valence Band Density of State

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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References

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