Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films

Abstract:

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High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 297-301)

Edited by:

Andreas Öchsner, Graeme E. Murch, Ali Shokuhfar and João M.P.Q. Delgado

Pages:

849-852

DOI:

10.4028/www.scientific.net/DDF.297-301.849

Citation:

T. Takeuchi et al., "Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films", Defect and Diffusion Forum, Vols. 297-301, pp. 849-852, 2010

Online since:

April 2010

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$35.00

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