Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method
This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.
Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado
M. N. Asiah et al., "Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method", Defect and Diffusion Forum, Vols. 312-315, pp. 1027-1031, 2011