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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 312-315Hydrodynamic Simulation of Drift Mobility in...

Hydrodynamic Simulation of Drift Mobility in N-Hg_0.8Cd_0.2Te

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Abstract:

In this paper, the transport properties of Hg0.8Cd0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as functions of the electric field strength. Comparison is made with Monte Carlo calculations and experimental results. The obtained velocity-field curve is in good agreement with reported experimental data.

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Diffusion in Solids and Liquids VI

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Periodical:

Defect and Diffusion Forum (Volumes 312-315)

Pages:

122-126

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.312-315.122

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Online since:

April 2011

Authors:

Mebarka Daoudi, Abderrahmane Belghachi, Luca Varani, Christophe Palermo

Keywords:

Drift Mobility, Hg_0.8Cd_0.2Te Semiconductor, Hydrodynamic Model, Monte-Carlo Method (MC-Method), Transport Properties

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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