In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface

Abstract:

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In situ monitoring of surface processes and understanding of growth processes are important in achieving precise control of crystal growth. Therefore, many surface monitoring techniques are used during crystal growth by molecular beam epitaxy (MBE). The most popular is reflection high-energy electron diffraction (RHEED) and photoemission current which provides information on the morphology during the growing surface. The photoemission oscillation technique has been successfully used in situ to monitor the growth of materials and to control the thickness as well as the roughness of the deposited layer. In this paper, we report results of atomic scale simulations used to study the dynamics of homoepitaxial growth of GaAs(001) β2(2x4) reconstructed surface and, in particular, the RHEED oscillations of the photoemission current.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 312-315)

Edited by:

Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado

Pages:

132-137

DOI:

10.4028/www.scientific.net/DDF.312-315.132

Citation:

H. Khachab et al., "In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface", Defect and Diffusion Forum, Vols. 312-315, pp. 132-137, 2011

Online since:

April 2011

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$35.00

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