Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique

Abstract:

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A numerical simulation study, using finite element method, was carried out to examine the temperature and concentration fields in the dissolution process of silicon into germanium melt. This work utilized a simplified configuration which may be considered to be similar material configuration to that used in the Vertical Bridgman growth methods. The concentration profile for the Si-Ge sample processed using this technique shows increasing transport silicon into the melt with time, moreover, a flat stable interface is observed. The mass and momentum equations for fluid flow, the energy and the solute mass transport were numerically solved. Results showed good agreements with experiments.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 312-315)

Edited by:

Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado

Pages:

240-247

DOI:

10.4028/www.scientific.net/DDF.312-315.240

Citation:

F. Mechighel et al., "Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique", Defect and Diffusion Forum, Vols. 312-315, pp. 240-247, 2011

Online since:

April 2011

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Price:

$35.00

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