Abstracts

Cluster Expansion Method and First-Principles Calculations
a.287

Pulsed Low-Energy Positron Beams for Investigating Defect Structures
a.288

Lateral Manipulation of Single Defect on Insulating Surface
a.289

Mechanism of Controlled Atomic Defects
a.290

Thermodynamic Properties of Semiconductors with Defects
a.291

Formation Energy of Schottky Vacancies in Metal Nanoparticles
a.292

Chemical Trends of Oxygen Vacancy Levels in Binary Metal Oxides
a.293

Creep Due to Generation and Annihilation of Vacancies
a.294

Heats of Transport of Vacancies in Model Crystalline Solids III
a.295

HomeDefect and Diffusion ForumDefects and Diffusion Theory and Simulation IIIThermodynamic Properties of Semiconductors with...

Thermodynamic Properties of Semiconductors with Defects

Page: A291