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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 326-328Phase Transformation and Thermoelectric Properties...

Phase Transformation and Thermoelectric Properties of In_0.25Co_4-xNi_xSb₁₂ Skutterudites

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Abstract:

In_0.25Co_4-xNi_xSb₁₂ skutterudites were synthesized by encapsulated induction melting and consolidated by hot pressing, and their thermoelectric properties were examined at temperatures from 323 to 823 K. A single δ-phase was obtained successfully by subsequent heat treatment at 823 K for 24 h. In_0.25Co_4-xNi_xSb₁₂ was an n-type semiconductor at all temperatures examined, indicating that Ni atoms acted as electron donors by substituting for Co atoms. The thermal conductivity was reduced considerably by In filling and Ni doping due to an increase in phonon scattering and impurity scattering. The thermoelectric properties were improved due to the low thermal conductivity as a result of In filling and the optimum carrier concentration caused by Ni doping.

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Diffusion in Solids and Liquids VII

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Defect and Diffusion Forum (Volumes 326-328)

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147-152

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https://doi.org/10.4028/www.scientific.net/DDF.326-328.147

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Online since:

April 2012

Authors:

Il Ho Kim

Keywords:

CoSb₃, Doping, Filling, Skutterudite, Thermoelectric

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] T.B. Massalski, H. Okamoto, P.R. Subramanian and L. Kacprzak: Binary Alloy Phase Diagrams, 2nd ed., American Society for Metals (1990), p.1232.

[2] P. Feschotte and D. Lorin: J. Less-Common Metals Vol. 155 (1989), p.255.

[3] H. Takizawa, K. Mimura, M. Ito, T. Sizuki and T. Endo: J. Alloys Comp. Vol. 282 (1999), p.79.

[4] G. S. Nolas, H. Takizawa, T. Endo, H. Sellinschegg and D. C. Johnson: Appl. Phys. Lett. Vol. 77 (2000), p.52.

[5] D. Mandrus, A. Migliori, T. W. Darling, M. F. Hundley, E. J. Peterson and J. D. Thompson: Phys. Rev. B. Vol. 52 (1995), p.4926.

[6] K. T. Wojciechowski: Mater. Res. Bull. Vol. 37 (2002), p. (2023).

[7] K. -H. Park, H. -I. Jung, S. -C. Ur and I. -H. Kim: J. Kor. Inst. Met. & Mater. Vol. 45 (2007), p.61.

[8] M. -J. Kim, S. -C. Ur and I. -H. Kim: J. Kor. Inst. Met. & Mater. Vol. 45 (2007), p.191.

[9] X. Y. Li, L. D. Chen, J. F. Fan, W. B. Zhang, T. Kawahara and T. Hirai: J. Appl. Phys. Vol. 98 (2005), p.83702.

[10] K. Akai, H. Kurisu, T. Shimura and M. Matsuura: Proc. 16th Intl. Conf. Thermoelectrics (Dresden, Germany, IEEE, Aug. 1997), p.334.

[11] K. Akai, H. Kurisu, T. Moriyama, S. Tamamoto and M. Matsuura: Proc. 17th Intl. Conf. Thermoelectrics (Nagoya, Japan, IEEE, May, 1998), p.105.

[12] T. He, J. Z. Chen, H. D. Rosenfeld and M. A. Subramanian: Chem. Mater. Vol. 18 (2006), p.759.

[13] J. -Y. Jung, S. -C. Ur and I. -H. Kim: Mater. Chem. Phys. Vol. 108 (2008), p.431.

[14] J. Y. Peng, P. N. Alboni, J. He, B. Zhang, Z. Su, T. Holgate, N. Gothard and T. M. Tritt: J. Appl. Phys. Vol. 104 (2008), p.053710.

DOI: 10.1063/1.2975184

[15] W. Y. Zhao, C. L. Dong, P. Wei, W. Guan, L. S. Liu, P. C. Zhai, X. F. Tang and Q. J. Zhang: J. Appl. Phys. Vol. 102 (2007), p.113708.

[16] J. Y. Peng, J. He, Z. Su, P. N. Alboni, S. Zhu and T. M. Tritt: J. Appl. Phys. Vol. 105 (2009), p.084907.

[17] H. Li, X. Tang, Q. Zhang and C. Uher: Appl. Phys. Lett. Vol. 94 (2009), p.102114.

[18] H. Anno, K. Matsubara, Y. Notohara, T. Sakakibara and H. Tashiro: J. Appl. Phys. Vol. 86 (1999), p.3780.

[19] I. -H. Kim, J. -I. Lee, S. -C. Ur, K. -W. Jang, G. -S. Choi and J. -S. Kim: Sol. Sta. Phen. Vol. 118 (2006), p.565.

[20] X. Shi, W. Zhang, L. D. Chen and J. Yang: J. Phys. Rev. Lett. Vol. 95 (2005), p.1855031.

[21] R. C. Mallik, J. -Y. Jung, S. -C. Ur and I. -H. Kim: Met. Mater. Int. Vol. 14 (2008), p.223.

[22] J. S. Dyck, W. Chen, C. Uher, L. Chen, X. Tang and T. Hirai: J. Appl. Phys. Vol. 91 (2002), p.3698.

[23] M. Puyet, A. Dauscher, B. Lenoir, M. Dehmas, C. Stiewe, E. Müller and J. Hejtmanek: J. Appl. Phys. Vol. 97 (2005), p.83712.

DOI: 10.1063/1.1868083

[24] D. T. Morelli, G. P. Meisner, B. Chen, S. Hu and C. Uher: Phys. Rev. B. Vol. 56 (1997), p.7376.

[25] G. A. Lamberton, Jr., S. Bhattacharya, R. T. Littleton IV, M. A. Kaeser, R. H. Tedstrom, T. M. Tritt, J. Yang and G. S. Nolas: Appl. Phys. Lett. Vol. 80 (2002), p.598.

DOI: 10.1063/1.1433911

[26] G. S. Nolas, J. L. Cohn and G. A. Slack: Phys. Rev. B. Vol. 58 (1998), p.164.

[27] B. C. Sales, B. C. Chakoumakos and D. Mandrus: Phys. Rev. B. Vol. 61 (2000), p.2475.

[28] R. C. Mallik, J. -Y. Jung, S. -C. Ur and I. -H. Kim: Met. Mater. Int. Vol. 14 (2008), p.615.

[29] R. C. Mallik, J. -Y. Jung, V. D. Das, S. -C. Ur and I. -H. Kim: Solid Stat. Comm. Vol. 141 (2007), p.233.