Evolution of the Helium-Related Defect in Polycrystalline Tungsten

Xiao Bo Lu; Ai Hong Deng; Yong Wang; Kang Wang; Ling Wang

doi:10.4028/www.scientific.net/DDF.373.108

Paper Titles

Temperature Dependence of Radiation Damage in ODS Steel Studied by Triple Beam Irradiation and Positron Annihilation Techniques
p.91

PALS and TEM Study on Irradiation Defects of 12Cr-ODS Steels Induced by He/H Ions
p.96

Study on the Evolution of Defects in Helium-Implanted Tungsten
p.100

The Evolution Behavior of Defects in the Nanofilms of W/Cu and W Probed by Doppler Broadening Positron Annihilation Spectroscopy
p.104

Evolution of the Helium-Related Defect in Polycrystalline Tungsten
p.108

Fe⁺ Implantation Induced Damage in Oxide Dispersion Strengthened Steels Investigated by Doppler Broadening Spectroscopy
p.113

Synergistic Effect on Formation of Radiation Damage in CLAM Steel Studied by Triple Beam Irradiation
p.117

Hydrogen-Induced Defects in Titanium
p.122

Study of Defects Introduced by 2 and 9 MeV Electron Irradiation in B2 Type Fe-Al Alloy
p.126

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 373Evolution of the Helium-Related Defect in...

Evolution of the Helium-Related Defect in Polycrystalline Tungsten

Abstract:

The evolution of the helium-related defect in polycrystalline tungsten was studied by Doppler Broadening Positron Annihilation Spectroscopy and Scanning Electron Microscope as functions of annealing temperature and implantation fluence. The experimental results showed that the defect type was not changed at lower annealing temperature, and the decline of S parameter manifested that the lower temperature annealing led the decrease of defect concentration. In addition there existed the same defect type with the increment of the implantation fluence, thus the rise of S parameter implied the increase of the defect concentration.

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Periodical:

Defect and Diffusion Forum (Volume 373)

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108-112

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.373.108

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Online since:

March 2017

Authors:

Xiao Bo Lu*, Ai Hong Deng, Yong Wang, Kang Wang, Ling Wang

Keywords:

DB-PAS, Helium, Ion Implantation, Vacancy-Type Defect

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