On the Structure of Ge-Associated Defect Centers in Irradiated High Purity GeO2 and Ge-Doped SiO2 Glasses

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Periodical:

Defect and Diffusion Forum (Volumes 53-54)

Edited by:

R.A. Weeks and D.L. Kinser

Pages:

469-476

DOI:

10.4028/www.scientific.net/DDF.53-54.469

Citation:

T.E. Tsai et al., "On the Structure of Ge-Associated Defect Centers in Irradiated High Purity GeO2 and Ge-Doped SiO2 Glasses", Defect and Diffusion Forum, Vols. 53-54, pp. 469-476, 1987

Online since:

January 1987

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