Defects and Doping Effects in CdTe and CuInS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing

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Periodical:

Defect and Diffusion Forum (Volumes 57-58)

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Edited by:

Fred H. Wohlbier

Pages:

445-461

Citation:

H.Y. Ueng and H.L. Hwang, "Defects and Doping Effects in CdTe and CuInS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing", Defect and Diffusion Forum, Vols. 57-58, pp. 445-461, 1988

Online since:

January 1988

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$38.00

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