Defects and Doping Effects in CdTe and CuInS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing

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Periodical:

Defect and Diffusion Forum (Volumes 57-58)

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Edited by:

F. H. Wöhlbier

Pages:

445-461

DOI:

10.4028/www.scientific.net/DDF.57-58.445

Citation:

H.Y. Ueng and H.L. Hwang, "Defects and Doping Effects in CdTe and CuInS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing", Defect and Diffusion Forum, Vols. 57-58, pp. 445-461, 1988

Online since:

January 1988

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