Neutral PGa Antisite Related Complex Defects in Bulk Lec GaP
p.107
p.107
Photoinduced Acceptor Levels in Semiinsulating GaAs
p.119
p.119
Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.127
p.127
Magneto-Optical Characterization of Isoelectronic Complex Defects in Semiconductors
p.133
p.133
Impurities in Gallium Arsenide and Phosphide: the 4d and 5d Series
p.145
p.145
Neutron Irradiation-Induced Defects in N-Type Vpe Layer of GaAs Mesfet
p.155
p.155
Electronic Structures of Native Complex Defects in GaP and InP
p.161
p.161
Diffusion in an Ar-Ion-Bombarded Au-Cu Alloy between - 120°C and 600°C
p.167
p.167
Application of Thermally Stimulated Luminescence (T.S.L.) Phenomenon to Study the Deffects
p.183
p.183
Impurities in Gallium Arsenide and Phosphide: the 4d and 5d Series
Abstract:
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Periodical:
Defect and Diffusion Forum (Volumes 62-63)
Pages:
145-154
Citation:
Online since:
January 1989
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Сopyright:
© 1989 Trans Tech Publications Ltd. All Rights Reserved
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