Paper Titles

Electron Traps Induced by Boron Implantation in Gallium Arsenide
p.77

Evidence for Bistable Character of the DX Center in AlGaAs
p.91

Photoionization Cross-Sections of the DX Centers in GaAlAs Alloys and of the Pressure Induced Deep Donots in GaAs
p.97

Neutral PGa Antisite Related Complex Defects in Bulk Lec GaP
p.107

Photoinduced Acceptor Levels in Semiinsulating GaAs
p.119

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.127

Magneto-Optical Characterization of Isoelectronic Complex Defects in Semiconductors
p.133

Impurities in Gallium Arsenide and Phosphide: the 4d and 5d Series
p.145

Neutron Irradiation-Induced Defects in N-Type Vpe Layer of GaAs Mesfet
p.155

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 62-63Photoinduced Acceptor Levels in Semiinsulating...

Photoinduced Acceptor Levels in Semiinsulating GaAs

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Defect and Diffusion Forum Vol. 62-63

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Periodical:

Defect and Diffusion Forum (Volumes 62-63)

Pages:

119-126

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.62-63.119

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Online since:

January 1989

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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