Paper Titles

The Jahn-Teller Effect and Zero Phonon Line Intensities
p.27

Optical and Magneto-Optical Properties of Arsenic Antisite Defects in GaAs
p.39

Tem Observation of Ordered InGaP Crystals Grown on (001) GaAs Substrates by Metalorganic Chemical Vapor Deposition
p.59

Spatial Distribution of Point Defect Clusters in Electron Irradiated GaSb and GaAs Single Crystals
p.69

Electron Traps Induced by Boron Implantation in Gallium Arsenide
p.77

Evidence for Bistable Character of the DX Center in AlGaAs
p.91

Photoionization Cross-Sections of the DX Centers in GaAlAs Alloys and of the Pressure Induced Deep Donots in GaAs
p.97

Neutral PGa Antisite Related Complex Defects in Bulk Lec GaP
p.107

Photoinduced Acceptor Levels in Semiinsulating GaAs
p.119

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 62-63Electron Traps Induced by Boron Implantation in...

Electron Traps Induced by Boron Implantation in Gallium Arsenide

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Defect and Diffusion Forum Vol. 62-63

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Periodical:

Defect and Diffusion Forum (Volumes 62-63)

Pages:

77-90

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.62-63.77

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Online since:

January 1989

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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