Paper Titles

Tem Observation of Ordered InGaP Crystals Grown on (001) GaAs Substrates by Metalorganic Chemical Vapor Deposition
p.59

Spatial Distribution of Point Defect Clusters in Electron Irradiated GaSb and GaAs Single Crystals
p.69

Electron Traps Induced by Boron Implantation in Gallium Arsenide
p.77

Evidence for Bistable Character of the DX Center in AlGaAs
p.91

Photoionization Cross-Sections of the DX Centers in GaAlAs Alloys and of the Pressure Induced Deep Donots in GaAs
p.97

Neutral PGa Antisite Related Complex Defects in Bulk Lec GaP
p.107

Photoinduced Acceptor Levels in Semiinsulating GaAs
p.119

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.127

Magneto-Optical Characterization of Isoelectronic Complex Defects in Semiconductors
p.133

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 62-63Photoionization Cross-Sections of the DX Centers...

Photoionization Cross-Sections of the DX Centers in GaAlAs Alloys and of the Pressure Induced Deep Donots in GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defect and Diffusion Forum Vol. 62-63

Info:

Periodical:

Defect and Diffusion Forum (Volumes 62-63)

Pages:

97-106

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.62-63.97

Citation:

Cite this paper

Online since:

January 1989

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: