Paper Titles

Radiation Damage, Defects and the Amorphous State in Irradiated Semiconductors
p.4

Amorphization of Semiconductors under Irradiation
p.31

Transformations Produced by Ion Implantation in Ion-Beam Amorphized Semiconductors
p.64

Anomalies in the Properties of Defects in Irradiated Semiconductors
p.98

Interactions, Stability and Dimensionality in the Problem of Defect Transformation in Semiconductors under Irradiation
p.130

Amorphization-Crystallization of Semiconductors during Ion Implantation as a Non-Equilibrium Phase Transitions
p.170

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 90Anomalies in the Properties of Defects in...

Anomalies in the Properties of Defects in Irradiated Semiconductors

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Periodical:

Defect and Diffusion Forum (Volume 90)

Pages:

98-129

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.90.98

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Online since:

January 1992

Authors:

Igor V. Verner, Nikolai N. Gerasimenko, James W. Corbett

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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