Preparation of Nano Structured SiOC Thin Film for Low k Application
In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.
Andreas Öchsner, Irina V. Belova and Graeme E. Murch
W. T. Kwon et al., "Preparation of Nano Structured SiOC Thin Film for Low k Application", Journal of Nano Research, Vol. 11, pp. 85-88, 2010