Paper Title:
Preparation of Nano Structured SiOC Thin Film for Low k Application
  Abstract

In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

  Info
Periodical
Edited by
Andreas Öchsner, Irina V. Belova and Graeme E. Murch
Pages
85-88
DOI
10.4028/www.scientific.net/JNanoR.11.85
Citation
W. T. Kwon, J.H. Lee, S. R. Kim, H.T. Kim, H. S. Kim, Y.H. Yu, Y. Kim, "Preparation of Nano Structured SiOC Thin Film for Low k Application", Journal of Nano Research, Vol. 11, pp. 85-88, 2010
Online since
May 2010
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$35.00
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